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ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATION JUNCTION TEMPERATURE HIGH DC CURRENT GAIN Figure 1: Package n n n 3 APPLICATIONS n 1 2 HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES TO-220 Figure 2: Internal Schematic Diagram DESCRIPTION The ST901T is a High Voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic package, designed for applications such us electronic ignition for small engines (scooters, lawnmovers, chainsaws). Table 1: Order Codes Part Number ST901T Marking 901T Package TO-220 Packaging TUBE Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 500 350 5 4 8 0.5 2.5 100 -65 to 150 150 Rev. 2 Unit V V V A A A A W C C 1/5 January 2005 ST901T Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.25 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES ICEO IEBO Parameter Collector Cut-off Current VCE = 500 V (IE = 0) V = 500 V CE Test Conditions Tcase = 125 oC Tcase = 125 oC Min. Typ. Max. 100 500 100 500 10 Unit mA mA mA mA mA V Collector Cut-off Current VCE = 350 V (IB = 0) V = 350 V CE Emitter Cut-off Current (IC = 0) VEB = 5 V IC = 10 mA L = 10 mH 350 VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VCE(sat)* VBE(sat)* hFE Collector-Emitter IC = 2 A Saturation Voltage Base-Emitter Saturation IC = 2 A Voltage DC Current Gain IC = 2 A IC = 4 A Functional Test INDUCTIVE LOAD VCC = 24 V L = 4 mH VCC = 12 V IB = 20 mA IB = 20 mA VCE = 2 V VCE = 2 V Vclamp = 350 V Vclamp = 250 V IC = 2 A VBE = -3 V 15 1.5 1500 500 4 2 1.8 V V L = 4 mH IB = 20 mA * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. tf Fall Time ts Storage Time ms ms 2/5 ST901T TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 3/5 ST901T Figure 5: Revision History Version 14-Oct-2004 15-Jan-2005 Release Date 1 2 Change Designator First Release. DC current gain range has been modified. 4/5 ST901T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 5/5 |
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